24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit
Diodes and transistors
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
- 60V
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
PMEG4010CEH, 115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010CEH, 115
- Diode Configuration
- 1 Discrete
PMEG4010BEA, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising an ultra-compact SOD323 (SC-76) surface-mount device.
- Part Number
- PMEG4010BEA, 115
- Diode Configuration
- 1 Discrete
PESD1IVN27-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.
- Part Number
- PESD1IVN27-AX
- Polarity
- Bidirectional
PESD1IVN24-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.
- Part Number
- PESD1IVN24-AX
- Polarity
- Bidirectional
BUK7K6R8-40E,115 employs TrenchMOS technology and is packaged as a dual-channel standard-level N-channel MOSFET in an LFPAK56D package, suitable for high-performance automotive applications.
- Part Number
- BUK7K6R8-40E,115
- Drain-Source Voltage (Vdss)
- 40V
BSS138BK,215 are N-channel enhancement-mode field-effect transistors (FETs) employing trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BSS138BK,215
- Drain-Source Voltage (Vdss)
- 60V
The BC846B,215 is an NPN general-purpose transistor housed in a compact SOT23 (TO236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC846B,215
- Transistor Type
- PNP
BC817-40-QR NPN general-purpose transistor, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC817-40-QR
- Transistor Type
- PNP
BC807-40-QR PNP general-purpose transistor, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC807-40-QR
- Transistor Type
- PNP
BAV99-QR high-speed switching diode, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BAV99-QR
- Forward Voltage Drop (Vf)
- 1.25V
BAS516,115 high-speed switching diodes, utilising an ultra-compact flat-lead SOD523 (SC-79) surface-mount device (SMD) plastic package.
- Part Number
- BAS516,115
- Diode Configuration
- Discrete
BAS21J,115 single high-speed switching diode, packaged in SOD323F (SC-90) – an extremely compact and low-profile surface-mount device (SMD) plastic package.
- Part Number
- BAS21J,115
- Diode Configuration
- Discrete
PMEG6010CEH,115 planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising a compact SOD123F surface-mount device (SMD)
- Part Number
- PMEG6010CEH,115
- Diode Configuration
- 1 Discrete
PMEG4010EH, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising a compact SOD123F surface-mount device (SMD)
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete