PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
PMV100EPAR
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
Product information
- Part number:
- PMV100EPAR
- Part Number:
- PMV100EPAR
- Drain-Source Voltage (Vdss):
- 60V
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Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | PMV100EPAR |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 2.2A |
| On-Resistance (RDS(on)) | 130mΩ@10V |
| Power Dissipation (Pd) | 8.3W |
| Gate Charge (Qg) | 17nC@10V |
| Input Capacitance (Ciss) | 616pF |
| Reverse Transfer Capacitance (Crss) | 26pF |
| Operating Temperature | -55℃ To +175℃ |
| Type | P-channel |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A N-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 surface-mount device (SMD) plastic package.
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Selected components
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- Part Number
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- Drain-Source Voltage (Vdss)
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- Part Number
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