PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
PMV48XPAR
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
Product information
- Part number:
- PMV48XPAR
- Part Number:
- PMV48XPAR
- Drain-Source Voltage (Vdss):
- 20V
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Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | PMV48XPAR |
| Drain-Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 3.5A |
| On-Resistance (RDS(on)) | 55mΩ@4.5V |
| Power Dissipation (Pd) | 930mW |
| Gate Charge (Qg) | 11nC@4.5V |
| Input Capacitance (Ciss) | 1nF |
| Reverse Transfer Capacitance (Crss) | 90pF |
| Operating Temperature | -55℃ To +150℃ |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
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- Part Number
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- Drain-Source Voltage (Vdss)
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- Part Number
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- Part Number
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- Reverse Withstand Voltage (Vrwm)
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