PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
Products
PMEG4010EH,115
PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
Product information
- Part number:
- PMEG4010EH,115
- Part Number:
- PMEG4010EH,115
- Diode Configuration:
- 1 Discrete
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Schottky Diode |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | PMEG4010EH,115 |
| Diode Configuration | 1 Discrete |
| Forward Voltage Drop (Vf) | 640mV@1A |
| DC Reverse Voltage Rating (Vr) | 40V |
| Rectification Current | 1A |
| Reverse Current (Ir) | 100uA@40V |
| Non-Repetitive Peak Surge Current (Ifsm) | 9A |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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Selected components
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- Part Number
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- Drain-Source Voltage (Vdss)
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- Part Number
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- Storage Capacity
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- Part Number
- PESD2CANFD36VT-QR
- Reverse Withstand Voltage (Vrwm)
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