Diodes and transistors
PESD2CANFD36VT-QR employs an ultra-compact SOD323 (SC-76) package to protect a single automotive Local Interconnect Network (LIN) bus line against electrostatic discharge (ESD).
- Part Number
- PESD2CANFD36VT-QR
- Reverse Withstand Voltage (Vrwm)
- 36V
PDTC114ET,215 NPN resistor-equipped transistors (RET) in compact SOT23 surface-mount device (SMD) plastic packages
- Part Number
- PDTC114ET,215
- Collector-Emitter Breakdown Voltage (Vceo)
- 50V
NX7002BKR A N-channel enhancement-mode field-effect transistor (FET) employing trench MOSFET technology
- Part Number
- NX7002BKR
- Drain-Source Voltage (Vdss)
- 60V
BZX384-B18-QX low-power voltage regulator diode, utilising a compact SOD323 (SC-76) surface-mount device diode
- Part Number
- BZX384-B18-QX
- Diode Configuration
- 1 Discrete
The BUK9Y29-40E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y29-40E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9Y25-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y25-60E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9Y15-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y15-60E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9K52-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9K52-60E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9K35-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9K35-60E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9K18-40E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9K18-40E,115
- Drain-Source Voltage (Vdss)
- 40V
The BUK9K13-60EX dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9K13-60EX
- Drain-Source Voltage (Vdss)
- 60V
BUK6D43-60EX Field-Effect Transistor utilises trench MOSFET technology, medium-power SOT457（SC - 74） surface-mount device
- Part Number
- BUK6D43-60EX
- Drain-Source Voltage (Vdss)
- 60V
BUK6D30-40EX Field-Effect Transistor utilises trench MOSFET technology, medium-power DFN2020MD-6 (SOT1220) surface-mount device
- Part Number
- BUK6D30-40EX
- Drain-Source Voltage (Vdss)
- 40V
BUK6D23-40EX Field-Effect Transistor utilises trench MOSFET technology, medium-power DFN2020MD-6 (SOT1220) surface-mount device
- Part Number
- BUK6D23-40EX
- Drain-Source Voltage (Vdss)
- 40V
BSS138P, 215 Field Effect Transistor SOT-23 N-channel enhancement mode field effect transistor (FET) utilising trench MOSFET technology
- Part Number
- BSS138P, 215
- Drain-Source Voltage (Vdss)
- 60V