PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BUK9K13-60EX
The BUK9K13-60EX dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
Product information
- Part number:
- BUK9K13-60EX
- Part Number:
- BUK9K13-60EX
- Drain-Source Voltage (Vdss):
- 60V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | BUK9K13-60EX |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 40A |
| On-Resistance (RDS(on)) | 12.5mΩ@5V |
| Power Dissipation (Pd) | 64W |
| Threshold Voltage (Vgs(th)) | 2.1V |
| Gate Charge (Qg) | 22.4nC@5V |
| Input Capacitance (Ciss) | 2.953nF |
| Operating Temperature | -55℃ To +175℃ |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.
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Selected components
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- Part Number
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- Drain-Source Voltage (Vdss)
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- Part Number
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- Drain-Source Voltage (Vdss)
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24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
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