PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
NX7002BKR
NX7002BKR A N-channel enhancement-mode field-effect transistor (FET) employing trench MOSFET technology
Product information
- Part number:
- NX7002BKR
- Part Number:
- NX7002BKR
- Drain-Source Voltage (Vdss):
- 60V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | NX7002BKR |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 270mA |
| On-Resistance (RDS(on)) | 2.8Ω@10V |
| Power Dissipation (Pd) | 310mW |
| Threshold Voltage (Vgs(th)) | 2.1V |
| Gate Charge (Qg) | 1nC@10V |
| Input Capacitance (Ciss) | 23.6pF |
| Operating Temperature | -55℃ To +150℃ |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.
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Selected components
All products
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
- 60V
24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit