PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BUK9Y15-60E,115
The BUK9Y15-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
Product information
- Part number:
- BUK9Y15-60E,115
- Part Number:
- BUK9Y15-60E,115
- Drain-Source Voltage (Vdss):
- 60V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | BUK9Y15-60E,115 |
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 53A |
| On-Resistance (RDS(on)) | 49mΩ@10V |
| Power Dissipation (Pd) | 32W |
| Threshold Voltage (Vgs(th)) | 2.1V |
| Gate Charge (Qg) | 17.2nC@5V |
| Input Capacitance (Ciss) | 137pF |
| Operating Temperature | -55°C To +175°C |
| Type | N-channel |
| Output Capacitance (Coss) | 74 PF |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
Dual logic-level N-channel MOSFET employing TrenchMOS technology in an LFPAK56D (dual Power - SO8) package. Designed and certified to AEC Q101 standards, this product is suitable for high-performance automotive applications.
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- Part Number
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- Storage Capacity
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