PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
PDTC114ET,215
PDTC114ET,215 NPN resistor-equipped transistors (RET) in compact SOT23 surface-mount device (SMD) plastic packages
Product information
- Part number:
- PDTC114ET,215
- Part Number:
- PDTC114ET,215
- Collector-Emitter Breakdown Voltage (Vceo):
- 50V
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Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Digital Transistors |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | PDTC114ET,215 |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 250mW |
| Transistor Type | NPN |
| DC Current Gain (hFE) | 30 |
| Minimum Input Voltage (VI(on)) | 1.8V |
| Maximum Input Voltage (VI(off)) | 1.1V |
| Input Resistance | 13kΩ |
| Resistance Ratio | 1 |
| Operating Temperature | -65℃ To +150℃ |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 100mV |
| Characteristic Frequency (fT) | 230MHz |
| Collector Bias Current (Icbo) | 100nA |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
NPN resistor-equipped transistor (RET) in a compact SOT23 surface-mount device (SMD) plastic package. PNP complementary counterpart: PDTA114ET
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