PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BUK7K6R8-40E,115
BUK7K6R8-40E,115 employs TrenchMOS technology and is packaged as a dual-channel standard-level N-channel MOSFET in an LFPAK56D package, suitable for high-performance automotive applications.
Product information
- Part number:
- BUK7K6R8-40E,115
- Part Number:
- BUK7K6R8-40E,115
- Drain-Source Voltage (Vdss):
- 40V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | BUK7K6R8-40E,115 |
| Drain-Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 40A |
| On-Resistance (RDS(on)) | 6.8mΩ@10V |
| Power Dissipation (Pd) | 64W |
| Threshold Voltage (Vgs(th)) | 4V |
| Gate Charge (Qg) | 9.1nC@20V |
| Input Capacitance (Ciss) | 1.46nF |
| Type | N-channel |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A dual-channel standard-level N-channel MOSFET utilising TrenchMOS technology, packaged in LFPAK56D (dual Power-SO8). This product has been designed and certified to AEC Q101 standards, making it suitable for high-performance automotive applications.
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