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BSS138BK,215

BSS138BK,215 are N-channel enhancement-mode field-effect transistors (FETs) employing trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.

Product information

Part number:
BSS138BK,215
Part Number:
BSS138BK,215
Drain-Source Voltage (Vdss):
60V

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Technical specifications

Same model · consistent parameters

Product identity

ParameterValue
Product CatalogueMetal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

Electrical characteristics

ParameterValue
Part NumberBSS138BK,215
Drain-Source Voltage (Vdss)60V
Continuous Drain Current (Id)360mA
On-Resistance (RDS(on))1.6Ω@10V
Power Dissipation (Pd)350mW
Threshold Voltage (Vgs(th))1.6V
Gate Charge (Qg)700pC@4.5V
Input Capacitance (Ciss)56pF
Operating Temperature-55℃ To +150℃
TypeN-channel

Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.

Product overview

An N-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.

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BSS138BK,215

BSS138BK,215

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