AD8541ARZ-REEL7 · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
Products
AD8541ARZ-REEL · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
AD8541ARZ · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
AD8541ARTZ-REEL7 · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
AD8541ARTZ-REEL · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
AD8541AKSZ-REEL7 · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- 1
- Rail-to-Rail
- Rail-to-rail Input, Rail-to-rail Output
AD8539ARZ · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- Dual
- Input Bias Current (Ib)
- 15pA
AD8539ARMZ-REEL · Analog Devices (ADI) · Integrated circuits
- Number Of Amplifiers
- Dual
- Input Bias Current (Ib)
- 15pA
24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
- 60V
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
PMEG4010CEH, 115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010CEH, 115
- Diode Configuration
- 1 Discrete
PMEG4010BEA, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising an ultra-compact SOD323 (SC-76) surface-mount device.
- Part Number
- PMEG4010BEA, 115
- Diode Configuration
- 1 Discrete
PESD1IVN27-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.
- Part Number
- PESD1IVN27-AX
- Polarity
- Bidirectional
PESD1IVN24-AX employs a compact SOD323 (SC-76) surface-mount device (SMD) plastic-encapsulated ESD protection component.
- Part Number
- PESD1IVN24-AX
- Polarity
- Bidirectional
BUK7K6R8-40E,115 employs TrenchMOS technology and is packaged as a dual-channel standard-level N-channel MOSFET in an LFPAK56D package, suitable for high-performance automotive applications.
- Part Number
- BUK7K6R8-40E,115
- Drain-Source Voltage (Vdss)
- 40V
BSS138BK,215 are N-channel enhancement-mode field-effect transistors (FETs) employing trench MOSFET technology, housed in a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BSS138BK,215
- Drain-Source Voltage (Vdss)
- 60V