The BC846B,215 is an NPN general-purpose transistor housed in a compact SOT23 (TO236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC846B,215
- Transistor Type
- PNP
Products
BC817-40-QR NPN general-purpose transistor, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC817-40-QR
- Transistor Type
- PNP
BC807-40-QR PNP general-purpose transistor, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BC807-40-QR
- Transistor Type
- PNP
BAV99-QR high-speed switching diode, utilising a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
- Part Number
- BAV99-QR
- Forward Voltage Drop (Vf)
- 1.25V
BAS516,115 high-speed switching diodes, utilising an ultra-compact flat-lead SOD523 (SC-79) surface-mount device (SMD) plastic package.
- Part Number
- BAS516,115
- Diode Configuration
- Discrete
BAS21J,115 single high-speed switching diode, packaged in SOD323F (SC-90) – an extremely compact and low-profile surface-mount device (SMD) plastic package.
- Part Number
- BAS21J,115
- Diode Configuration
- Discrete
PMEG6010CEH,115 planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising a compact SOD123F surface-mount device (SMD)
- Part Number
- PMEG6010CEH,115
- Diode Configuration
- 1 Discrete
PMEG4010EH, 115V planar Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, utilising a compact SOD123F surface-mount device (SMD)
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
PESD2CANFD36VT-QR employs an ultra-compact SOD323 (SC-76) package to protect a single automotive Local Interconnect Network (LIN) bus line against electrostatic discharge (ESD).
- Part Number
- PESD2CANFD36VT-QR
- Reverse Withstand Voltage (Vrwm)
- 36V
PDTC114ET,215 NPN resistor-equipped transistors (RET) in compact SOT23 surface-mount device (SMD) plastic packages
- Part Number
- PDTC114ET,215
- Collector-Emitter Breakdown Voltage (Vceo)
- 50V
NX7002BKR A N-channel enhancement-mode field-effect transistor (FET) employing trench MOSFET technology
- Part Number
- NX7002BKR
- Drain-Source Voltage (Vdss)
- 60V
BZX384-B18-QX low-power voltage regulator diode, utilising a compact SOD323 (SC-76) surface-mount device diode
- Part Number
- BZX384-B18-QX
- Diode Configuration
- 1 Discrete
The BUK9Y29-40E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y29-40E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9Y25-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y25-60E,115
- Drain-Source Voltage (Vdss)
- 60V
The BUK9Y15-60E,115 dual logic-level N-channel MOSFET, utilising TrenchMOS technology and housed in an LFPAK56D (dual Power - SO8) package, is suitable for high-performance automotive applications.
- Part Number
- BUK9Y15-60E,115
- Drain-Source Voltage (Vdss)
- 60V