MBRB30H50CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
Electronic components
SL04-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 540 MV @ 1.1 A
UFT10005
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -55°C ~ 150°C
VSSAF5N50-M3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1.4 MA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 410 MV @ 2.5 A
IDW20S120FKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
DZ1070N22KHPSA3
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 150 MA @ 2200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.11 V @ 3000 A
MBRB2035CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBRTA80040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1GHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBRTA50020R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
CMOSH-4E TR PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
IDW40G65C5BXKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 20A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
NTE6368
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 50 MA @ 1400 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 800 A
MBRTA80035
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5822-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 525 MV @ 3 A
MB20H90CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
V3PL45HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 450 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 540 MV @ 3 A
MBRTA40035RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C