NTE6104
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 50 MA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.15 V @ 1500 A
Electronic components
MBRTA80030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB058LAM-60TFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 4 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 640 MV @ 3 A
SBR30E45CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 150°C
RB160LAM-90TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 730 MV @ 1 A
UFT7360M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 70A
- Operating Temperature - Junction
- -55°C ~ 150°C
DZW10500-04-BP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 MA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.01 V @ 5000 A
MBRTA40020RL
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1KFSHMWG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBRTA800200R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
ER5G
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 5 A
MBRTA80080
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE6365
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 30 MA @ 1600 V
- Operating Temperature - Junction
- -40°C ~ 180°C
MBR20200CT-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
STTH2R02U
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 3 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 2 A
MBRF60060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYG10M-E3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MBRTA800150
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C