NTE6362
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 30 MA @ 1400 V
- Operating Temperature - Junction
- -40°C ~ 180°C
Electronic components
MBR20150CT-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE10PB-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 1 A
MBRF60040R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A (DC)
- Operating Temperature - Junction
- -40°C ~ 175°C
RB168MM150TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 4 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 840 MV @ 1 A
MBRTA80040R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE6358
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 30 MA @ 1000 V
- Operating Temperature - Junction
- -40°C ~ 180°C
MBRTA60080
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1KLW RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBR20100CS2TR-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
PD3S230HQ-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 100 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 2 A
MBRF60030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A (DC)
- Operating Temperature - Junction
- -40°C ~ 175°C
NTE116-100
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRTA80035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
V2FM15HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.46 V @ 2 A
MBRF600200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBYV26C-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 1 A
MBRTA80030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C