MBR20150CT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
Electronic components
BAL99TB_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
MBRTA60030L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
1PS74SB23,125
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 MA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
BAS21UE6359HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 125mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SE50PAJHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.16 V @ 5 A
MB20H90CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N4448WS
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
UFT14060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 70A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRTA60020L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
AU1PJ-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A
MBR20100CS2TR-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
GP10Y-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBR10100CS2TR-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)
BYM10-800-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
1N4005GP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRTA600150R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
S1B
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A