RL101F
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
Electronic components
MBRB20H60CTHE3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
MBRB2535CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
EGL34B-E3/98
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 500 MA
STPS2L40U
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 220 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 2 A
LFUSCD20120B
- Manufacturer
- Littelfuse Inc.
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- 175°C (Max)
BAV16W
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 855 MV @ 10 MA
MBRTA60040L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBYV26C-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 1 A
MBRB30H50CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
IDW24G65C5BXKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 12A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
GL34G-E3/98
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 500 MA
BYG22D-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
MB30H90CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
MBRTA60035L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS21-QVL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBRB2035CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
AU1PK-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A