PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
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| Parameter | Value |
|---|---|
| Product Catalogue | Bipolar Junction Transistor (BJT) |
| Parameter | Value |
|---|---|
| Part Number | BC817-40,215 |
| Transistor Type | NPN |
| Collector Current (Ic) | 500mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 345mW |
| DC Current Gain (hFE) | 250 |
| Characteristic Frequency (fT) | 100MHz |
| Collector-Base Offset Current (Icbo) | 100nA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 700mV |
| Operating Temperature | -65℃ To +150℃ |
| Emitter-Base Breakdown Voltage (Vebo) | 5V |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
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