PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BC807-40-QR
The PNP general-purpose transistor BC807-40-QR utilises a compact SOT23 (TO-236AB) surface-mount device (SMD) plastic package.
Product information
- Part number:
- BC807-40-QR
- Part Number:
- BC807-40-QR
- Transistor Type:
- PNP
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Bipolar Junction Transistor (BJT) |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | BC807-40-QR |
| Transistor Type | PNP |
| Collector Current (Ic) | 500mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Power Dissipation (Pd) | 345mW |
| DC Current Gain (hFE) | 600 |
| Characteristic Frequency (fT) | 80MHz |
| Collector-Base Offset Current (Icbo) | 100nA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 700mV@500mA,50mA |
| Operating Temperature | -65℃ To +150℃ |
| Emitter-Base Breakdown Voltage (Vebo) | 5V |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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Selected components
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- Part Number
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- Drain-Source Voltage (Vdss)
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- Part Number
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- Drain-Source Voltage (Vdss)
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24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
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