PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BAS521,115
High-voltage switching diode BAS521,115 packaged in SOD523 (SC-79) ultra-compact surface-mount device (SMD) plastic housing
Product information
- Part number:
- BAS521,115
- Part Number:
- BAS521,115
- Diode Configuration:
- Discrete
Request a quote
Pricing, availability and delivery are confirmed in your quotation.
Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Product Catalogue | Switching Diodes |
Electrical characteristics
| Parameter | Value |
|---|---|
| Part Number | BAS521,115 |
| Diode Configuration | Discrete |
| Forward Voltage Drop (Vf) | 1V@100mA |
| DC Reverse Voltage Rating (Vr) | 300V |
| Rectification Current | 250mA |
| Reverse Current (Ir) | 500mW |
| Non-Repetitive Peak Surge Current (Ifsm) | 4.5A |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
Request a quote
Selected components
All products
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
- 60V
24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit