PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
IJW120R100T1FKSA1
IJW120R100T1FKSA1
Product information
- Manufacturer:
- Infineon Technologies
- Part number:
- IJW120R100T1FKSA1
- FET Type:
- N-Channel
- Voltage - Breakdown (V(BR)GSS):
- 1200 V
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Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Transistors JFETs |
| Series | CoolSiC™ |
| Manufacturer | Infineon Technologies |
Electrical characteristics
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 1200 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.5 µA @ 1200 V |
| Current Drain (Id) - Max | 26 A |
| Power - max | 190 W |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 19.5V (VGS) |
| Resistance - RDS(On) | 100 MOhms |
| Drain To Source Voltage (Vdss) | 1200 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | Tube |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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