PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
JFTJ105
JFTJ105
Product information
- Manufacturer:
- Onsemi
- Part number:
- JFTJ105
- FET Type:
- N-Channel
- Voltage - Breakdown (V(BR)GSS):
- 25 V
Request a quote
Pricing, availability and delivery are confirmed in your quotation.
Request a quoteTechnical specifications
Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Transistors JFETs |
| Manufacturer | Onsemi |
| Base Product Number | JFTJ1 |
Electrical characteristics
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 500 MA @ 15 V |
| Voltage - Cutoff (VGS Off) @ Id | 4.5 V @ 1 µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - max | 1 W |
| Resistance - RDS(On) | 3 Ohms |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | Tape & Reel (TR) |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
Request a quote
Selected components
All products
PMV48XPAR employs a P-channel enhancement-mode field-effect transistor (FET) utilising trench MOSFET technology, housed in a compact SOT23 (TO-236AB) package.
- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
- 60V
24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit