PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
2N5114
2N5114
Product information
- Manufacturer:
- Microchip Technology
- Part number:
- 2N5114
- FET Type:
- P-Channel
- Voltage - Breakdown (V(BR)GSS):
- 30 V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Transistors JFETs |
| Series | Military, MIL-PRF-19500 |
| Manufacturer | Microchip Technology |
| Base Product Number | 2N5114 |
Electrical characteristics
| Parameter | Value |
|---|---|
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 90 MA @ 18 V |
| Voltage - Cutoff (VGS Off) @ Id | 10 V @ 1 NA |
| Power - max | 500 MW |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Resistance - RDS(On) | 75 Ohms |
| Drain To Source Voltage (Vdss) | 30 V |
| Operating Temperature | -65°C ~ 200°C (TJ) |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Supplier Device Package | TO-18 (TO-206AA) |
| Package / Case | Bulk |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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