PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
NSVJ3910SB3T1G
NSVJ3910SB3T1G
Product information
- Manufacturer:
- Onsemi
- Part number:
- NSVJ3910SB3T1G
- FET Type:
- N-Channel
- Voltage - Breakdown (V(BR)GSS):
- 25 V
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Same model · consistent parameters
Product identity
| Parameter | Value |
|---|---|
| Category | Discrete Semiconductor Products Transistors JFETs |
| Series | Automotive, AEC-Q101 |
| Manufacturer | Onsemi |
| Base Product Number | NSVJ3910 |
Electrical characteristics
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 MA @ 5 V |
| Voltage - Cutoff (VGS Off) @ Id | 600 MV @ 100 µA |
| Current Drain (Id) - Max | 50 MA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 5V |
| Power - max | 400 MW |
| Drain To Source Voltage (Vdss) | 25 V |
Package & mechanical
| Parameter | Value |
|---|---|
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-CPH |
| Package / Case | Tape & Reel (TR) Cut Tape (CT) |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
A localized overview is not yet available. The model-specific parameters are shown below.
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