PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
2SA940
2SA940 MOSFET Transistor Ic Audio Amplifier Circuit BOM List Quote 2SA940
Product information
- Manufacturer:
- Manufacturer
- Part number:
- 2SA940
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Same model · consistent parameters
Specifications available on request.
Product identity
| Parameter | Value |
|---|---|
| Part number | 2SA940 |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
Manufacturer:StandardPackaging:TubeProduct Category:MOSFETBrand:standardRoHS: DetailsConfiguration:SingleTechnology:SiFall Time:77 nsMounting Style:Through HoleHeight:16.3 mmPackage / Case:TO-220-3Length:10.67 mmTransistor Polarity:N-ChannelProduct Type:MOSFETNumber of Channels:1 ChannelRise Time:69 nsVds - Drain-Source Breakdown Voltage:600 VFactory Pack Quantity:50Id - Continuous Drain Current:9.5 ASubcategory:MOSFETsRds On - Drain-Source Resistance:730 mOhmsTransistor Type:1 N-ChannelVgs - Gate-Source Voltage:- 30 V, + 30 VType:MOSFETMinimum Operating Temperature:- 55 CTypical Turn-Off Delay Time:144 nsMaximum Operating Temperature:+ 150 CTypical Turn-On Delay Time:23 nsPd - Power Dissipation:156 WWidth:4.7 mmChannel Mode:EnhancementPart # Aliases:2SA940_NLSeries:2SA940Unit Weight:0.068784 oz
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- Part Number
- PMV48XPAR
- Drain-Source Voltage (Vdss)
- 20V
PMV100EPAR P-channel enhanced-mode field-effect transistor (FET), employing trench MOSFET technology
- Part Number
- PMV100EPAR
- Drain-Source Voltage (Vdss)
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24AA02/SN is a 2 Kbit electrically erasable PROM.
- Part Number
- 24AA02/SN
- Storage Capacity
- 2Kbit