PMEG4010EH,115V Schottky barrier rectifier, incorporating an integrated protection ring for stress protection, housed in a compact, low-profile, surface-mount device (SMD) plastic package.
- Part Number
- PMEG4010EH,115
- Diode Configuration
- 1 Discrete
Products
BU2527AF
BU2527AF N-Channel Transistor New And Original BU2527AF
Product information
- Manufacturer:
- Manufacturer
- Part number:
- BU2527AF
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Same model · consistent parameters
Specifications available on request.
Product identity
| Parameter | Value |
|---|---|
| Part number | BU2527AF |
No matching parameters
Parameters refer to this exact model. Confirm package and test conditions against the manufacturer datasheet.
Product overview
Manufacturer:StandardPackaging:TubeProduct Category:MOSFETBrand:standardRoHS: DetailsConfiguration:SingleTechnology:SiFall Time:77 nsMounting Style:Through HoleHeight:16.3 mmPackage / Case:TO-220-3Length:10.67 mmTransistor Polarity:N-ChannelProduct Type:MOSFETNumber of Channels:1 ChannelRise Time:69 nsVds - Drain-Source Breakdown Voltage:600 VFactory Pack Quantity:50Id - Continuous Drain Current:9.5 ASubcategory:MOSFETsRds On - Drain-Source Resistance:730 mOhmsTransistor Type:1 N-ChannelVgs - Gate-Source Voltage:- 30 V, + 30 VType:MOSFETMinimum Operating Temperature:- 55 CTypical Turn-Off Delay Time:144 nsMaximum Operating Temperature:+ 150 CTypical Turn-On Delay Time:23 nsPd - Power Dissipation:156 WWidth:4.7 mmChannel Mode:EnhancementPart # Aliases:BU2527AF_NLSeries:BU2527AFUnit Weight:0.068784 oz
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- Part Number
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- Storage Capacity
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