SMD34HE1-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 3 A
Electronic components
BAW101S,115
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SCS320AHGC9
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 650 V
- Operating Temperature - Junction
- 175°C (Max)
ES1E_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
VS-HFA16PB120-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3 V @ 16 A
BAV23AQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 400mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
STPSC10H12D
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 60 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
BAW56M3T5G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RBE1VAM20ATR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 1 A
MMBD3004SE RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- -65°C ~ 150°C
SS24SHE3_B/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Operating Temperature - Junction
- -55°C ~ 150°C
APT100S20BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 2 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 100 A
BAS70TWQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
1SS55-T4-AZ
- Manufacturer
- Renesas Electronics America Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 1 MA
1SS226,LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)