BAT54AHYT116
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C
Electronic components
BYS12-90-M3/TR3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 1 A
BAW56UE6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C
VS-2EMH01-M3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 2 A
BAW 79D E6327
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 1A (DC)
- Operating Temperature - Junction
- 150°C (Max)
MMSD4148T3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
BAS20LT3G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
SDT5A50SA-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 300 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 520 MV @ 5 A
1N4149TR
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 25 NA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
SS25SHE3_B/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 50 V
- Operating Temperature - Junction
- -55°C ~ 150°C
PD3S140Q-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A