IDH10G65C6XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 33 µA @ 420 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 10 A
Electronic components
1N4154
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 100 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 30 MA
BAS40-04Q-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
IDW75D65D1XKSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 75 A
MMBD1503A
- Manufacturer
- Rectron USA
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 150°C (Max)
B340AXF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
BAV23A-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C
APT75DQ120BG
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 3.1 V @ 75 A
M1MA151WKT1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 100mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SA2J-E3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
MMBD3004CA RFG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- -65°C ~ 150°C
1N649-1
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 NA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 400 MA
MMBD3004A_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 225mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RBQ30TB45BNZC9
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 350 µA @ 45 V
- Voltage - Forward (Vf) (Max) @ If
- 590 MV @ 30 A
BAS7006B5003
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
B360AF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 650 MV @ 3 A
QSG0115UDJ-7
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -65°C ~ 150°C