RB520SM-30FHT2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 200 MA
Electronic components
BAV170-7-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 215mA
- Operating Temperature - Junction
- -55°C ~ 150°C
DSC10A065D1-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 250 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
GSD2004C-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
1PS70SB20,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 35 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 500 MA
BAT54STB-TB6_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
VS-C4PH3006L-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 15 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 15 A
DAN217-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- -40°C ~ 150°C
SS1040_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 50 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
BAW156Q-7-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 160mA
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-10ETS12-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 10 A
BAS40WT-05-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
1SS372(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 20 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 100 MA
BAW56-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 250mA
- Operating Temperature - Junction
- 150°C (Max)
NTE506
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 MA @ 1500 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 500 MA
BAV199Q-13-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 160mA
- Operating Temperature - Junction
- -65°C ~ 150°C
B320AF-13
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 3 A
MMBD7000-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C