BAS70-04W-QF
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- 150°C
Electronic components
SCS310APC9
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 50 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 10 A
GSD2004A-G3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
BAT43WS-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 15 MA
BAS70WT-05-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- -55°C ~ 125°C
MMBD914LT1HTSA1
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 100 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
BAS40-06W-QF
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C
SF3004PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 15 A
BAW56WQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C
16F120
- Manufacturer
- Solid State Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 16 A
BAT54CQ-7-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -65°C ~ 150°C
FDLL4150
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA
BAW56HDW-13
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- -65°C ~ 155°C
NTE5852
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 19 A
GSD2004C-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
S1BL
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
BAS40-06WF
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
NTE607
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 3.3 V @ 70 MA