GSD2004S-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
BAT85,113
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAS40CDW_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
GSD2004C-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
1N4454UR/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 100 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 10 MA
BAS70-04Q-13-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- -55°C ~ 125°C
B0540WHE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 80 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 500 MA
GSD2004A-HE3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)
CUS10S40,H3F
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 150 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 400 MV @ 500 MA
BAV99HDW-13
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -65°C ~ 150°C
VS-EPU3006LHN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 30 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 30 A
IDK08G65C5XTMA2
- Manufacturer
- Infineon Technologies
- Operating Temperature - Junction
- -55°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 8 A
BAV70W-7-F-52
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 300mA
- Operating Temperature - Junction
- -65°C ~ 150°C
BAW56-G
- Manufacturer
- Comchip Technology
- Current - Average Rectified (Io) / diode
- 215mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS85,115
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 2.3 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 100 MA
BAW56TB_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -55°C ~ 150°C
SDT05S60XK
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 200 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 5 A
GSD2004A-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 225mA
- Operating Temperature - Junction
- 150°C (Max)