VS-30CPQ050-N3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- 150°C (Max)
Electronic components
ESH1D-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 1 A
VS-20CTQ040HN3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- 175°C (Max)
VSSAF3N50-M3/6B
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 MA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 400 MV @ 1.5 A
TSF40H100C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
TSF10U60C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
RBR3LAM40CTFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 100 µA @ 40 V
- Operating Temperature - Junction
- 150°C (Max)
CMSH2-40M BK PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 500 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 2 A
MBR30200CTE3/TU
- Manufacturer
- Microchip Technology
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
CRS13(TE85L,Q,M)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Reverse Leakage @ Vr
- 50 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 1 A
VX60100PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
ES2G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 2 A
VX30170CHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 175°C
SX36_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 100 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 750 MV @ 3 A
MBR10150CT
- Manufacturer
- Littelfuse Inc.
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS3P3HM3J/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 580 MV @ 3 A
DSA20C150PB
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 175°C
ESH2B-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 2 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 930 MV @ 2 A