M6045P-E3/45
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -65°C ~ 150°C
Electronic components
NRVBSS23FA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 400 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 2 A
RB500V-40TE-17
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 10 MA
VX60M45PWHM3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
RFN1L6STE25
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.45 V @ 800 MA
VX6045PW-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
PMEG060V030EPEZ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 60 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 3 A
V40DM120C-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5404GH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
VX80M45PW-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -40°C ~ 175°C
MBR30150PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
PD3S220L-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 160 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 490 MV @ 2 A
MBR30100PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
GV806_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 8 A
MBR40150PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 40A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE8D30JHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
SF3004PTH
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
ER501A_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 950 MV @ 5 A