SB340LS_AY_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 60 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 460 MV @ 3 A
Electronic components
NTST20U100CTG
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -40°C ~ 150°C
B340LB-M3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 400 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 3 A
TSF40U100C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
SR503-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 1 MA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 5 A
MBR3060PT
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5819-E3/53
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 900 MV @ 3.1 A
VBT6045CBP-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
SBR2U150SA-13-50
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 75 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 2 A
VB60100C-M3/4W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 150°C
1N5408G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 3 A
VX60M45PW-M3/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -40°C ~ 175°C
V3P22HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 940 MV @ 3 A
VBT4045C-M3/8W
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -40°C ~ 150°C
SE8D30G-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
TSF40H150C
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Average Rectified (Io) / diode
- 20A
- Operating Temperature - Junction
- -55°C ~ 150°C
V30D202CHM3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -40°C ~ 175°C