AU1PM-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
Electronic components
MBRF20060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBRT30A100CT
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH61W04SW
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 20 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 60 A
MBRF30045
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
SMMSD301T1G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 200 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 10 MA
MBRF60080R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-85EPF12
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 85 A
MBRF20040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
IDH06G65C5XKSA2
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 110 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 6 A
RB088T150FH
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)
GL41Y-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
MBRF60045R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A (DC)
- Operating Temperature - Junction
- -40°C ~ 175°C
NTE5880
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.26 V @ 38 A
MBRF30035
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
STBR3008WY
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 2 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 30 A
PMEG2010AET,215
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 1 A
MBRF20030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C