NTE5890
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.26 V @ 38 A
Electronic components
MBRF50060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH6010W
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 20 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 2 V @ 60 A
MBRTA600200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
C3D08065A
- Manufacturer
- Wolfspeed, Inc.
- Current - Reverse Leakage @ Vr
- 60 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 8 A
MBRF40020
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
STTH1L06A
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
FST6310M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5923
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 500 V
- Voltage - Forward (Vf) (Max) @ If
- 1.23 V @ 63 A
MBRF30060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5620
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 3 A
MBRTA50030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-3EMH06-M3/5AT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 3 A
MBRF500100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N6621US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 500 NA @ 440 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.2 A
DPF60C200HJ
- Manufacturer
- IXYS
- Current - Average Rectified (Io) / diode
- 30A
- Operating Temperature - Junction
- -55°C ~ 175°C
ISL9R3060G2-F085
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 100 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.4 V @ 30 A
MBRF30040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 150A
- Operating Temperature - Junction
- -55°C ~ 150°C