MBRF50045R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
Electronic components
S2B-E3/52T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MBRF20045
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
FFSP4065BDN-F085
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 40 µA @ 650 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 20 A
MBR10100CTF-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- -55°C ~ 175°C
VS-30ETU12-M3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 145 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.68 V @ 30 A
MBRF12030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
SS25FA
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 400 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 700 MV @ 2 A
MBRF40080R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
DSC10120
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 640 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.7 V @ 10 A
MBRB20H35CT-E3/81
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
VS-50WQ04FNHM3
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 5 A
MBRF20035
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE5896
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 12 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.23 V @ 50 A
MBRF120100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 60A
- Operating Temperature - Junction
- -55°C ~ 150°C
SE30AFJHM3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
MBRF40045R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
S4D02120A
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 10 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 2 A