MBRB20H100CTGHE3/8
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
Products
1N6078US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.76 V @ 18.8 A
MCL101A-TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MBRTA60035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
US1Q-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.9 V @ 1 A
IDW32G65C5BXKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 16A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
MBRTA800100
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4934-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
MBRF50040R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5811URS/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
MBRTA60060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5402-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
MBRTA60030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
BYG20JHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 1.5 A
MBRF40060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
SB007-03Q-TL-E
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 5 µA @ 15 V
- Voltage - Forward (Vf) (Max) @ If
- 550 MV @ 70 MA
UFT7340M
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 70A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N5806URS/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 1 A