MBRF60030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A (DC)
- Operating Temperature - Junction
- -40°C ~ 175°C
Products
NTE116-100
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRTA80035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
V2FM15HM3/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1.46 V @ 2 A
MBRF600200
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
SBYV26C-E3/73
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 2.5 V @ 1 A
MBRTA80030R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N6080US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 37.7 A
S2G-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MBRTA60045R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RB080LAM-30TR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 150 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 5 A
MBR10100CS2TR-E1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)
MBRTA60040R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
S2J-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
MBRTA80020R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
NTE6159
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 5 MA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 200 A
STPS2L40AF
- Manufacturer
- STMicroelectronics
- Current - Reverse Leakage @ Vr
- 220 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 2 A
MBRF50060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C