MBRTA50030
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
Products
SD101BW-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 200 NA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 15 MA
MBRTA80035L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
SK38-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 3 A
MBRF20080R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
1N6076US/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.76 V @ 18.8 A
MBRF20045R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
ES1PD-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 920 MV @ 1 A
MBRTA40040L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS21WTHE3-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBRTA80030L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -40°C ~ 100°C
NTE5926
- Manufacturer
- NTE Electronics, Inc
- Current - Reverse Leakage @ Vr
- 10 MA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.4 V @ 60 A
MBRTA600200R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
RF101LAM2STFTR
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 870 MV @ 1 A
MBRF20035R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 100A
- Operating Temperature - Junction
- -55°C ~ 150°C
VS-70HF120M
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Operating Temperature - Junction
- -65°C ~ 180°C
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 220 A
MBRTA40030L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 200A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS16D-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA