GL34G-E3/98
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 500 MA
Products
BYG22D-E3/TR
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
MB30H90CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
MBRTA60035L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAS21-QVL
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 100 NA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 200 MA
MBRB2035CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
AU1PK-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.85 V @ 1 A
MBR20150CT-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -55°C ~ 150°C
BAL99TB_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
MBRTA60030L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
1PS74SB23,125
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 1 MA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
BAS21UE6359HTMA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 125mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SE50PAJHM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.16 V @ 5 A
MB20H90CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
1N4448WS
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 2.5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
UFT14060
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 70A
- Operating Temperature - Junction
- -55°C ~ 150°C
MBRTA60020L
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
AU1PJ-M3/84A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 1 A