RB088BM150TL
- Manufacturer
- Rohm Semiconductor
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- 150°C (Max)
Products
SBYV27-50-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1.07 V @ 3 A
BAV99S/ZLX
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
LL4148 L0G
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 50 MA
MBR10100CS2-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)
V4PAN50-M3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 600 µA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 430 MV @ 2 A
MBRB2535CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 12.5A
- Operating Temperature - Junction
- -65°C ~ 150°C
BY254P-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 3 A
MBRTA800100R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
PG4003_R2_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRB20H100CTGHE3/4
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
S3DHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2.5 A
BAW56S/ZLF
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
MB30H90CTHE3_A/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
P300J-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 3 A
BAS20-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
MBRTA60060R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
VSS8D5M12HM3/I
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 350 µA @ 120 V
- Voltage - Forward (Vf) (Max) @ If
- 620 MV @ 2.5 A