MBR20100CS2TR-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
Products
GP10Y-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 1600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBR10100CS2TR-G1
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 5A
- Operating Temperature - Junction
- 150°C (Max)
BYM10-800-E3/96
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 10 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 1 A
1N4005GP-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRTA600150R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 300A
- Operating Temperature - Junction
- -55°C ~ 150°C
S1B
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MBRB30H50CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 15A
- Operating Temperature - Junction
- -65°C ~ 175°C
SL04-E3-18
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 20 µA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 540 MV @ 1.1 A
UFT10005
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 50A
- Operating Temperature - Junction
- -55°C ~ 150°C
VSSAF5N50-M3/6A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1.4 MA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 410 MV @ 2.5 A
IDW20S120FKSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 10A (DC)
- Operating Temperature - Junction
- -55°C ~ 175°C
DZ1070N22KHPSA3
- Manufacturer
- Infineon Technologies
- Current - Reverse Leakage @ Vr
- 150 MA @ 2200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.11 V @ 3000 A
MBRB2035CTHE3_A/P
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 10A
- Operating Temperature - Junction
- -65°C ~ 150°C
MBRTA80040
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 400A
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1GHE3_A/H
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
MBRTA50020R
- Manufacturer
- GeneSiC Semiconductor
- Current - Average Rectified (Io) / diode
- 250A
- Operating Temperature - Junction
- -55°C ~ 150°C
CMOSH-4E TR PBFREE
- Manufacturer
- Central Semiconductor Corp
- Current - Reverse Leakage @ Vr
- 500 NA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 200 MA