Electronic components
GKN130/18
- Manufacturer
- GeneSiC Semiconductor
- Current - Reverse Leakage @ Vr
- 22 MA @ 1800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 60 A
1N4595R
- Manufacturer
- GeneSiC Semiconductor
- Current - Reverse Leakage @ Vr
- 4 MA @ 1200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 150 A
1N1614R
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
1N3671AR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 38 A
VS-150U100DL
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Operating Temperature - Junction
- -40°C ~ 180°C
- Voltage - Forward (Vf) (Max) @ If
- 1.47 V @ 600 A
JANS1N5802US
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2.5 A
1N3673AR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 38 A
1N1200AR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A
1N3670AR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 700 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A
1N1202AR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.35 V @ 38 A
UES1106SM/TR
- Manufacturer
- Microchip Technology
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
- Reverse Recovery Time (trr)
- 50 Ns
1N1203B
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A