Electronic components
1N1124A
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 10 A
JANS1N5804US
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 1 µA @ 150 V
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2.5 A
1N1615
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 50 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.5 V @ 15 A
1N1615A
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 30 A
1N1583
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 30 A
UES1105SM
- Manufacturer
- Microchip Technology
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
- Reverse Recovery Time (trr)
- 50 Ns
UES1106SM-1/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
1N1126A
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 2.2 V @ 10 A
246NQ200-1
- Manufacturer
- SMC Diode Solutions
- Current - Reverse Leakage @ Vr
- 6 MA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.12 V @ 240 A
UES1105SM/TR
- Manufacturer
- Microchip Technology
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 1 A
- Reverse Recovery Time (trr)
- 50 Ns
JANS1N5809/TR
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 5 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 875 MV @ 4 A
JANS1N5802US/TR
- Manufacturer
- Microchip Technology
- Operating Temperature - Junction
- -65°C ~ 175°C
- Voltage - Forward (Vf) (Max) @ If
- 975 MV @ 2.5 A
1N1125
- Manufacturer
- Microchip Technology
- Current - Reverse Leakage @ Vr
- 10 µA @ 300 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 30 A