BAS416F
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 5 NA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 1.25 V @ 150 MA
Electronic components
BAV756S,115
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 250mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
BAS16VY,165
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RB521SM-30T2R
- Manufacturer
- Rohm Semiconductor
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 470 MV @ 200 MA
BAS16VY,115
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RB521S-30-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 30 µA @ 10 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 200 MA
1SS383(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
1SS361LP3-7
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 1 µA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.23 V @ 100 MA
PMEG2005EGWJ
- Manufacturer
- Nexperia USA Inc.
- Current - Reverse Leakage @ Vr
- 200 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 390 MV @ 500 MA
1SS396,LF
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 70mA
- Operating Temperature - Junction
- 125°C (Max)
1N4151WS-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 50 NA @ 50 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 50 MA
BAS16VY,125
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RB751S-40DP-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 NA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 370 MV @ 1 MA
MMBD4148TW-TP
- Manufacturer
- Micro Commercial Co
- Current - Average Rectified (Io) / diode
- 150mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4148WS-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 100 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA
BAR43SFILM
- Manufacturer
- STMicroelectronics
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 150°C (Max)
BAS40-05-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
1SS355 RRG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 100 NA @ 80 V
- Voltage - Forward (Vf) (Max) @ If
- 1.2 V @ 100 MA