BAT74,235
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 125°C (Max)
Electronic components
1N5819-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 1 MA @ 40 V
- Voltage - Forward (Vf) (Max) @ If
- 600 MV @ 1 A
BAV170E6327HTSA1
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C (Max)
SK12-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 500 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 500 MV @ 1 A
BAS40-04-G3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
B05100W-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If
- 850 MV @ 500 MA
BAS40-05-HE3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- 125°C (Max)
S2M-LTP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 2 A
SDMG0340LS-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 30mA (DC)
- Operating Temperature - Junction
- -40°C ~ 125°C
B5817WS-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 1 MA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 450 MV @ 1 A
SS0540_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Reverse Leakage @ Vr
- 10 µA @ 20 V
- Voltage - Forward (Vf) (Max) @ If
- 510 MV @ 500 MA
BAS16DXV6T1G
- Manufacturer
- Onsemi
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
1N4448W-E3-08
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 75 V
- Voltage - Forward (Vf) (Max) @ If
- 720 MV @ 5 MA
1SS319(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
1SS422(TE85L,F)
- Manufacturer
- Toshiba Semiconductor And Storage
- Current - Average Rectified (Io) / diode
- 100mA
- Operating Temperature - Junction
- 125°C (Max)
1N4005G-T
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 5 µA @ 600 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 1 A
BAT54WSQ-7-F
- Manufacturer
- Diodes Incorporated
- Current - Reverse Leakage @ Vr
- 2 µA @ 25 V
- Voltage - Forward (Vf) (Max) @ If
- 1 V @ 100 MA
BAV70DW-7-F
- Manufacturer
- Diodes Incorporated
- Current - Average Rectified (Io) / diode
- 150mA
- Operating Temperature - Junction
- -65°C ~ 150°C