S2D-E3/5BT
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.15 V @ 1.5 A
Electronic components
BAT64-06B5000
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C
SS19L
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 50 µA @ 90 V
- Voltage - Forward (Vf) (Max) @ If
- 800 MV @ 1 A
BAT64-06B5003
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA
- Operating Temperature - Junction
- 150°C
S1DLW RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
MUH1PD-M3/89A
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 1 µA @ 200 V
- Voltage - Forward (Vf) (Max) @ If
- 1.05 V @ 1 A
BAT54C-QR
- Manufacturer
- Nexperia USA Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- 150°C
UF4004GP-TP
- Manufacturer
- Micro Commercial Co
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 1 A
BAT54C-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 125°C
MPG06G-E3/54
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 5 µA @ 400 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 1 A
BAS40-06B5000
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 120mA (DC)
- Operating Temperature - Junction
- 150°C
BAS40C-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA
- Operating Temperature - Junction
- -55°C ~ 150°C
SA2M-E3/61T
- Manufacturer
- Vishay General Semiconductor - Diodes Division
- Current - Reverse Leakage @ Vr
- 3 µA @ 1000 V
- Voltage - Forward (Vf) (Max) @ If
- 1.1 V @ 2 A
MMBD7000_R1_00001
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
NSR01L30P2T5G
- Manufacturer
- Onsemi
- Current - Reverse Leakage @ Vr
- 3 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If
- 530 MV @ 100 MA
BAV170-AU_R1_000A1
- Manufacturer
- Panjit International Inc.
- Current - Average Rectified (Io) / diode
- 200mA (DC)
- Operating Temperature - Junction
- -55°C ~ 150°C
RS1KL RVG
- Manufacturer
- Taiwan Semiconductor Corporation
- Current - Reverse Leakage @ Vr
- 5 µA @ 800 V
- Voltage - Forward (Vf) (Max) @ If
- 1.3 V @ 800 MA
BAS70-06B5000
- Manufacturer
- Infineon Technologies
- Current - Average Rectified (Io) / diode
- 70mA (DC)
- Operating Temperature - Junction
- 150°C